发明名称 MONOLITHIC DISTRIBUTED RESISTOR-CAPACITOR DEVICE AND CIRCUIT UTILIZING POLYCRYSTALLINE SEMI-CONDUCTOR MATERIAL
摘要 <p>Monolithic Distributed Resistor-Capacitor Device and Circuit Utilizing Polycrystalline Semiconductor Material A distributed resistor-capacitor device which is highly reproducible with near ideal electrical characteristics including a substrate, an insulating layer on a major surface of the substrate, and a polycrystalline semiconductor material on the insulating layer. The polycrystalline layer is the resistor and cooperates with the substrate as the capacitor. Fabrication of the device is compatible with integrated circuit fabrication and can be used with field-effect and bipolar junction transistors.</p>
申请公布号 CA1128672(A) 申请公布日期 1982.07.27
申请号 CA19790342567 申请日期 1979.12.24
申请人 BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY (THE) 发明人 GERZBERG, LEVY;MEINDL, JAMES D.
分类号 H01L27/04;H01L21/02;H01L21/822;H01L27/07;H01L29/94;(IPC1-7):01L29/00 主分类号 H01L27/04
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