| 摘要 |
PURPOSE:To reduce the influence of surface level and stably provide an element having a desired resistance value by increasing a carrier density in the vicinity of the surface of an active layer. CONSTITUTION:Si ions are implanted into semiinsulated GaAs and the foregoing GaAs is annealed in hydrogen atmosphere. Subsequently, a mesa etching is provided for this active layer and Au-Ge alloy is vapor-attached to the both ends of the active layer to form an alloy reohmic electrode 31. As a result, because an n<+> implantation layer by Si ion implantation can reduce the influence of a surfacial depletion layer, the width of the depletion layer is reduced and the element having a desired resistance value can be obtained. |
