Single surface LPE crystal growth

摘要

A method and apparatus for growing liquid phase epitaxial (LPE) crystals upon only one surface of a supporting substrate. The method requiring the insertion of a gasket between a pair of substrates, upon whose exposed surfaces it is desired to grow an LPE crystal. The gasket essentially acting to contain a meniscus of entrapped flux and thereby entrap an air bubble between the substrates so as to prevent growth upon the interior surfaces of the assembly.