| 摘要 |
PURPOSE:To form a second electrode layer in a self-aligned manner by forming a stepped part in advance at an interlayer insulating film and a glass layer. CONSTITUTION:A first electrode layer 3 of polysilicon is formed on an oxide film 2 on a semiconductor substrate 1, and an interlayer insulating film 4 is formed on the assembly. Then, a contact hole 5 is made, and, in succession, a glass layer 6 is formed on the whole surface. A second insulating film 7 is formed on the glass layer 6, and a resist layer 8 is formed in a part where a second electrode 11 is not formed. The second insulating film 7 and the glass layer 6 are removed by dry etching by making use of the resist layer 8 as a mask. Because the etching speed of the glass layer 6 is fast as compared with the insulating film 4, the glass layer inside the contact hole 5 can be removed completely. Then, an electrode material such as Al or the like is coated on the whole surface, and, in succession, the whole surface is etched until the second interlayer insulating film 7 is exposed. By this method, the second electrode layer 11 is formed in a self-aligned manner in such a way that it is buried by the insulating film 7 and the glass layer 6.
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