发明名称 |
High voltage planar multijunction solar cell |
摘要 |
A high voltage multijunction solar cell is provided wherein a plurality of discrete voltage generating regions or unit cells are formed in a single generally planar semiconductor body (12). The unit cells comprise a doped regions (20, 22) of opposite conductivity type separated by a gap or undiffused region (24). Metal contacts (26) connect adjacent cells together in series so that the output voltages of the individual cells are additive. In some embodiments, doped field regions (14) separated by gap (16) overlie the unit cells but the cells may be formed in both faces of the wafer (FIG. 2).
|
申请公布号 |
US4341918(A) |
申请公布日期 |
1982.07.27 |
申请号 |
US19800219677 |
申请日期 |
1980.12.24 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION |
发明人 |
EVANS, JR., JOHN C.;CHAI, AN-TI;GORADIA, CHANDRA P. |
分类号 |
H01L27/142;(IPC1-7):H01L31/06 |
主分类号 |
H01L27/142 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|