| 摘要 |
PURPOSE:To obtain GaAs Schottky type dual gate FET with superb cross modulation characteristics, by improving active layer carrier density profile under gate electrodes. CONSTITUTION:An n type GaAs active layer 2 is formed on a semi-insulator GaAs substrate 1 and a source 3, drain 4, the first and the second electrodes 5, 6 are provided on a semi-insulation GaAs substrate 1 to form a Schottky type dual gate FET. This FET has active layer carrier density profile with the difference of depth between a depth d1 (when an active layer carrier density is 0.9N0, where N0 is the maximum value of an active carrier density under the electrode 5, 6) and a depth d2 (when it is 0.33), d2-d1 being 0.1mum and more. As a result, the cross modulation characteristics of self bias gain control value GR=10-30 dB is largely improved reaching the level of a Si MOS dual gate FET. |
