Surface acoustic wave device

摘要

A surface acoustic wave device in which an X-cut LiTaO3 single crystal substrate has its one major surface coated with a SiO2 film and the direction of propagation of surface acoustic waves is selected between 80 DEG and 180 DEG measured from the Y-axis toward the Z-axis. The surface acoustic wave devices in accordance with the present invention has an extremely low temperature coefficient change and a high electro-mechanical coupling coefficient, exhibits a higher degree of both short- and long-term stability, and can suppress the generation of unwanted waves to a minimum or negligible degree.