摘要 |
PURPOSE:To prevent the affection by a corrosion, an insulation failure or the like due to a resin after sealing the resin or the external atmosphere by a method wherein the entire metallic parts of a semiconductor element and leads are covered with an inorganic film layer like Al2O3 and others. CONSTITUTION:An organic film layer 6 like Al2O3 and others for covering a semiconductor element 1 and the surface of metallic parts 2-4 is interposed between the elements 1 and the foregoing metallic parts of metallic plate 2, metallic thin lead 3 and external lead 4. As described above, since the element 1 and the entire metallic parts 2-4 are covered with the film layer 6, the affection by a corrosion or an insulation failure due to a resin afrer sealing it or the external atmosphere can be reduced. |