| 摘要 |
PURPOSE:To eliminate the wire formed on a laminated film of SO2 and a PSG on a semiconductor substrate provided with function region by smoothening the side of a window by increasing the density of P in the PSG film and reflowing when the laminated film is covered to form a window corresponding to the function region. CONSTITUTION:An SiO2 film 2' and a high impurity density PSG film 3 are lamilnated and covered on a semiconductor substrate 2 formed with a function region 1, and a contactig window 4 is opened correspondingly to the region 1. Then, it is heat treated at 1,050-1,100 deg.C, to reflow the film 3, an oblique part 6 is produced on the side wall of the window 4, and a non-doped polycrystalline Si layer 5 is contacted with the region 1 via the window 4 and is accumulated on the overall surface including the oblique part 6. Thereafter, an aluminum wire 7 of the prescribed pattern is formed on the layer 6, plasma 8 is emitted to the layer 6 of the exposed part to alter the layer 6 into an SiO<2> layer 9. Simultaneously, an Al2O3 film 10 is produced on the surface of the wire 7. Subsequently, the overall surface is covered with a covering PSG film 11, is then etched to form a pad region 13 reaching the wire 7. |
