| 摘要 |
PURPOSE:To make it possible to sense various gases in a short time at room temperature through adaption of battery reaction by installing an AgCl layer as thin film solid electrolyte film at the gate section of a MOS type FET construction. CONSTITUTION:An n type source, drain 2 and field oxide layer (SiO2 layer ) 3 are provided on a P type Si wafer, and on the layer 3 a metallic gate electrode 4 of the metal selected from Au, Ag, Bi and Cu and a thin film solid electrolyte 5 of AgCl to cover the electrode 4 are formed. Next, a grid-mesh type metallic electrode 6 of the same material as the electrode 4 is formed to produce a gas sensing element. A characteristic voltage for a gas to be sensed, for example, 200WV for Cl2 gas, 250WV for O2 gas, etc. is applied between the electrodes 4 and 6 to operate the FFT section. With this construction a gas sensing element that is capable of sensing gas quickly at room temperature with low electricity comsumption and has high reliability is provided. |
