| 摘要 |
PURPOSE:To enhance the photoconductive characteristics, etc. of a photoconductive member by dispersing a specified amount of N in the photoconductive amorphous Si layer contg. H or halogen while distributing N at the maximum concn. at the surface of the electrically conductive support side or the surface of the opposite side, at lower concn. in the intermediate part and at uniform concn. in a direction parallel to the surface. CONSTITUTION:On an electrically conductive support 101 a barrier layer 102 having 30-1,000Angstrom thickness is formed with nonphotoconductive amorphous Si, insulating oxide or the like. On the layer 102 a photoconductive amorphous Si layer 103 contg. H or halogen is formed. The layer 103 contains 0.02-30 atomic % N as a whole and has 0.1-60 atomic% distribution peak at the side of the support 101 urface or a part close to the side. The N concn. of the intermediate region is gradually reduced from the side of the support surface, and N is distributed at uniform conc. in a direction parallel to the surface. A distribution peak may be provided to other surface 104 of the layer 103. Thus, a photoconductive member 100 suitable for all environments and having superior endurance, photosensitivity, etc. is obtd. |
