| 摘要 |
<p>PURPOSE:To improve the protective reliability as well as to obtain the fuse ROM structure for a microscopically formed semiconductor device by a method wherein a polycrystalline silicon layer is formed through the intermediaries of a high temperature thermal oxide film and an insulation-proof distribution film. CONSTITUTION:A high temperature thermal oxide film 11, an insulation-proof distribution film 12, and a low temperature oxide film 13 are formed on a semiconductor substrate 10, and a polycrystalline silicon layer 14 of a prescribed pattern are formed on a low temperature oxide film 13. The fuse ROM construction 15 has the structure wherein the dielectric breakdown resistant film 12, as a passivation film located directly below the polycrystalline silicon layer 14, is pinched by the high temperature thermal oxide film 11 and the low temperature thermal oxide film 13, and as the above has a very thin film thickness, the semiconductor device can be microscopically formed easily. Also, as there exists the insulation-proof destruction film 12, the protective reliability for the heating of the fuse and a high current when an ROM writing-in is performed can be increased.</p> |
