| 摘要 |
PURPOSE:To obtain the semiconductor device having high output impedance and multiple outputs by a method wherein a bipolar transistor and an MOS transistor are provided in the same well. CONSTITUTION:A P-well 2 is provided on an N type semiconductor substrate 1, and then the first and second N<+> regions 21 and 22, an N<+> region 11 for connection, and a P<+> region 24 to be used for carrier injection are provided on an N type semiconductor substrate 1. Then, a gate electrode 5 is provided on an insulating film 3 together with the electrodes 41-44 to be connected to each region. Besides, 6 is considered to be a depletion layer which will be formed by applying voltage to a gate 5. N<+> regions 21 and 22 constitute a bipolar transistor Tr2 having the base which is to be commonly used with a P-well 2 and an N- substrate 1 located below these regions 21 and 22, and the P-well 2, an insulating film 3 and a P<+> region 24 constitute the MOS transistor Tr1. And the carrier injection into the base is controlled by the expansion of the depletion layer 6. |
