| 摘要 |
PURPOSE:To perform an etching without using a resist mask for the semiconductor device by a method wherein the polycrystalline silicon on a substrate is selectively crystallized by performing a laser annealing, and a crystallized region remains utilizing the difference in etching speed due to the varied degree of crystallization. CONSTITUTION:A metal mask 4 is placed on the polycrystalline Si 3 on the substrate 1 having an SiO2 film 2. When a laser beam 5 is irradiated on the above, an unmasked section 6 of the polycrystalline Si is crystallized. When the mask is removed and an etching is performed, the crystallized section 6 is selectively removed due to the difference of the etching speed of the laser-annealed part 6 and a non-annealed polycrystallized part 3. Through these procedures, a highly accurate etching can be performed without using a resist mask. |
