| 摘要 |
PURPOSE:To unnecessitate the use of a lid by a method wherein an insulating polyimid resin film is coated on the main surface of the face-down type FET consisting of a chemical semiconductor and havng a P-N junction, and the metal plated layer of each electrode is extended on the resin film. CONSTITUTION:After epitaxial layers 21 and 22, source and drain electrodes 24 and 25, and a gate electrode 26 have been formed on a GaAs substrate 20, a mesa etching is performed. Then, a polyimide resin film is formed on the main surface of the substrate by applying a prepolymer solution and performing a heat treatment. Contact holes to be used for each electrode are opened, and an Au plated layer 32 is provided thrugh the intermediary of an adhesive layer 30. Through these procedures, the face-down type FET, which unnecessitates the use of an airtight lid, can be obtained. |
