发明名称 |
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE |
摘要 |
The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs. |
申请公布号 |
JPS57118667(A) |
申请公布日期 |
1982.07.23 |
申请号 |
JP19810191905 |
申请日期 |
1981.12.01 |
申请人 |
INTERN BUSINESS MACHINES CORP |
发明人 |
PEETAA BUUA;RICHIYAADO SHII JIYOI;JIEEMUZU EFU TSUIIGURAA |
分类号 |
H01L27/08;H01L21/265;H01L21/322;H01L21/331;H01L21/76;H01L21/8222;H01L27/06;H01L27/092;H01L29/08;H01L29/167;H01L29/73;H01L29/78 |
主分类号 |
H01L27/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|