| 摘要 |
PURPOSE:To eliminate completely the uncertainty of end point detection and make the drilling of finer precision aperture possible by a method wherein the end point is detected by the composition in which the region of the material with faster oxidation speed such as polycrystalline silicone is formed. CONSTITUTION:As the oxidation speed of polycrystalline silicone 3 is faster than that of a single crstal silicone substrate 1, insulating oxide film 4 formed by thermal oxidization grows thicker on the polycrystalline silicone. If etching monitor is formed on a single crystal silicone substrate without element like a conventional method, over-etching is neessary to complete the aperture drilling on the single crystal silicone. On the other hand, by forming etching monitor on the polycrystalline silicone, the end point of etching can be securely detected. |
