| 摘要 |
PURPOSE:To perform thermal treatment of electrodes of metal and the like under a low temperature, in a short time and uniformly by a method wherein hydrogen ion of enough quantity for annealing is supplied from outside of a reaction tube. CONSTITUTION:A means by which hydrogen ion produced by a plasma generator is introduced into a reaction tube in which semiconductor substrates with electrodes is housed and the electrodes are treated by heat is provided. For instance, hydrogen gas from a hydrogen gas supplying source 1 such as a high pressure hydrogen bomb is introduced into a plasma generator 2 provided outside of the reaction tube 3 and hydrogen ion produced in the plasma generator 2 is introduced into the reaction tube 3. Internal atmosphere of the plasma generater 2 and the reaction tube 3 is exhausted and decompressed, so that the inside of them is nearly vacuum, then the produced hydrogen ion reaches the surface of the semiconductor wafers 6 heated by a heater of an electric furnance 7 without disappearing during the introduction into the reaction tube 3 and sufficient annealing effect can be obtained. |
