| 摘要 |
PURPOSE:To obtain a solar cell with less reflection by a method wherein pyramidal structures are built on an Si semiconductor substrate surface and a semiconductor substance is vapor plated vertical to the substrate surface for the formation of a thin, transparent semiconductor film on the surfaces of the pyramidal structures. CONSTITUTION:An Si semiconductor substrate 1 is immersed in an alkaline water solution of the caustic soda or hydrazine hydrate and the surface is direction ally etched into crystallographic pyamids 2. Si having a tetragonal crystalline structure, with the surface formed in the direction (100), the crystal-lographic pyramidal structure 2 is a rectangular pyramid formed on the base of the plane (111). Conditions for vapor plating of a transparent semiconductor thin film 7 are most properly met when the angle formed by a substrate surface and the deposition direction is 50-70 deg.. Because the planes (100) and (111) forming an angle of 54.74 deg. for example, deposition, vertical to the substrate whereupon pyramids 2 are built automatically satisfies the conditions necessary for proper vapor plating. |
