| 摘要 |
<p>A method of attaching a silicon IC chip (10) to a metal or ceramic substrate (38) includes coating the underside of the die with a barrier material (32), such as chromium, and then coating the first layer with another material (34) selected from the group consisting of silver, gold, tin, antimony, or alloys thereof. A preform (36) of material selected from the group consisting of tin, tin with a relatively small amount of antimony, or tin with a relatively small amount of antimony and a trace of aluminum is then placed on the heated substrate (38) followed by the die (10) to effect attachment.</p> |
