发明名称 SEMICONDUCTOR LASER
摘要 PURPOSE:To enable to connect laser rays having different wave length to multimode type optical fibers by a method wherein two semiconductor laser devices are constituted of laminated bodies having mutually different crystal layers, and the prescribed signal generators are connected thereto. CONSTITUTION:A clad layer 2A, an active layer 3A, a clad layer 4A, an active layer 5A and a clad layer 6A are laminated in order to form a laminated body 7A, the first semiconductor laser device 15A is constituted of the laminated body 7A thereof and electrodes 10A, 11, and the second semiconductor laser devide 15B having a laminated body 7B being laminated with opposite crystal layers to the laminated body 7A and electrodes 10B, 11 and making an active layer 3B as the effective active layer is constituted. The signal generators 16A, 16B consisting of a DC bias electric power source and a modulating signal source are connected between the electrodes of the respective laser devices making the electrodes 10A, 10B side as positive, and laser rays being different mutually and having wave length being modulated in accordance with modulating signal currents sent out from the respective signal generators are obtained from the respective laminated bodies 7A, 7B.
申请公布号 JPS57117289(A) 申请公布日期 1982.07.21
申请号 JP19810004199 申请日期 1981.01.14
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 NOGUCHI ETSUO;NAGAI HARUO
分类号 H01S5/00;H01S5/042;H01S5/062;H01S5/40 主分类号 H01S5/00
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