| 摘要 |
PURPOSE:To reduce access time, by detecting and amplifying a readout output read out on a data line at a differential amplifying circuit consisting of a MOS transistor(TR). CONSTITUTION:When a memory cell is accessed and the information is read out on data lines L15,L16, the potential of the line reading out the information ''0'' is decreased than the potential of the line reading out information ''1'', but the change is very slow and 2R1.I of potential difference is obtained between output terminals (a) and (b). Thus, if a minute potential difference is caused between the data lines L15, L16, gm of MOSTRs Q10, Q11 is correspondingly changed, the minute potential difference is amplified and picked up, and operation is made when the potential reading out the information ''0'' is slightly lowered. Thus, disable detection until the potential difference reaches the element threshold voltage is avoided. Thus, the access time can be reduced. |
