发明名称 |
PROGRAMMABLE READ ONLY MEMORY CIRCUIT |
摘要 |
<p>A programmable read-only memory (PROM) circuit is provided wherein each one of a plurality of fusible links is coupled between a different row and column conductor of a matrix of row and column conductors and wherein each one of the row conductors is coupled to a corresponding one of a plurality of row driver circuits, each one having an output transistor connected to the corresponding one of the row conductors. Switch means are provided for feeding a first level of base current to the output transistors during the programming mode and for feeding a second, lower level of base current to such output transistors during the read mode.</p> |
申请公布号 |
JPS57117189(A) |
申请公布日期 |
1982.07.21 |
申请号 |
JP19810188294 |
申请日期 |
1981.11.24 |
申请人 |
RAYTHEON CO |
发明人 |
FUABIO PURINSHIPI;BURUUSU JII AAMUSUTORONGU |
分类号 |
G11C17/06;G11C17/14;G11C17/18 |
主分类号 |
G11C17/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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