| 摘要 |
PURPOSE:To make better the ohmic contact and wire bonding property by a method wherein an Au-Be layer is provided as an electrode, and an Al layer is provided on the layer thereof interposing middle layers of a TiN layer, etc., between them. CONSTITUTION:An N type GaP layer 11, P type GaP layer 12 are made to grow on an N type GaP substrate 10 by liquid phase epitaxial growth method to form a P-N junction 13. Then Au-Si films 19 are formed on the rear as the electrodes on the N side, and an Au-Be film 14, a TiN film 15, a Ti film 16, a TiN film 17 and the Al film 18 are accumulated in order on the surface of the P type layer by the sputtering method. Accordingly because the middle layers of the TiN-Ti-TiN layers act as the barrier to prevent diffusion of Au, Be to be generated when the heat treatment to obtain ohmic contact is to be performed and Ga in the GaP substrate into the surface of electrode, mixing of impurities into the Al film on the surface is not generated, and alloying of GaP and Au-Be being necessary to obtain favorable ohmic contact can be performed stably. |
