| 摘要 |
PURPOSE:To obtain a photoreceptor long in life and high in sensitivity to longer wavelength light, by successively forming an amorphous silicon layer, an amorphous germanium silicon layer, and further on them an amorphous silicon layer on a conductive substrate. CONSTITUTION:A photoconductive amorphous silicon (a-Si) layer 2 is formed on a conductive substrate 1 in 10-15mum thickness by the glow discharge decomposition method, etc. using a gas mixture of SiH4, PH3, B2H6, etc. An amorphous Ge-Si layer 3 is formed in 0.1-0.8mum thickness on the layer 2 using a gas mixture of SiH4, GeH4, PH3, B2H6, etc. to provide the second photoconductive layer 3, thus permitting a photoreceptor superior in durability and resistance to abrasion and scratching. Forming another amorphous Si layer 4 about 1mum thick enhances resistance to scratching and abrasion still higher. |
