| 摘要 |
PURPOSE:To obtain the thin film having excellent optical response and photoelectric conversion characteristics by laminating the CdS thin film on a substrate under the Ar gas pressure of 1-10 Pa by a magnetron sputtering method, and heat-treating the obtained thin film in the Ar atmosphere at 400- 500 deg.C. CONSTITUTION:A substrate comprising Pyrex glass on which a transparent In2O3 conductive film is deposited and a high purity CdS target which is a sputter source are enclosed in a magnetron sputtering device. Then Ar gas is introduced, and the gas pressure of 1-10 Pa is obtained. With the temperature of the substrate being 150-250 deg.C, sputtering is performed by using the high frequency power whose power density is about 1.3/cm<2>, and fine CdS thin film is laminated on the substrate. Then, heat treatment is performed in the Ar atmosphere in which the pressure is 10 Pa at 400-500 deg.C, and the CdS thin film suitable for photoelectric conversion element, a photosensitive body, and the like is obtained. |
