| 摘要 |
PURPOSE:To have a high quality, thin layer grown by a method wherein a procedure is repeated several times wherein a first layer is epitaxially grown to be subjected to photoetching resulting in a lattice, groove, or dot shaped pattern and then another layer is epitaxially grown over them to be subjected to polishing, in a process for epitaxially growing a semiconductor crystal on an insulator substrate crystal. CONSTITUTION:A GaAs crystalline layer 2 is epitaxially grown on a crystalline insulator substrate 1 of saphire, spinel, or beryllia. The grown layer 2 characterized poor because of a high lattice defect concentration is coated with an SiO2 film 3 and a prescribed pattern is obtained by photoetching. The grown layer 2 is then subjected to etching using a liquid mixture of NaOH and H2O2 whereby the layer is totally removed except where some insular regions are left. A GaAs layer 4 is then epitaxially grown exemplifiedly of Ga-AsCl3-H2 making use of disproportionation. Thus, the side-wise spread component is made larger than the thicnkess-wise grown component, which reduces the lattice defect concentration, and then the surface is polished flat. The steps above are to be repeated several times. |
