| 摘要 |
PURPOSE:To always stabilize photoconductivity characteristics and to obtain a photoconductive material superior in durability against all the environmental conditions, etc., by forming a nonphotoconductive surface barrier layer containing silicon and carbon as main components and halogen on a photoconductive amorphous layer formed on a conductive substrate. CONSTITUTION:A photoconductive amorphous silicon layer 102 containing either or both of H and halogen is formed on a conductive substrate 101, and on this layer 102, a 3-5,000nm thick surface barrier layer 103 is formed with a nonphotoconductive amorphous silicon material containing 40-90 atomic % carbon or 1-20 atomic % halogen or <=19 atomic % H in addition to carbon is formed to make a photoconductive material 100. The layer 103 hinders the charge on a surface 104 of the material 100 from intruding into the layer 102, resulting in giving superior photoelectric characteristics, thus permitting the obtained photoconductive material 100 to have low light fatigue, long life, high photosensitivity, and stable characteristics even in high humidity. |
