| 发明名称 |
SETT FOR JUSTERING AV DE ELEKTRISKA KARATERISTIKORNA HOS EN HALVLEDARANORDNING GENOM BILDANDE AV REKOMBINATIONSCENTRA GENOM BESTRALNING AV ELEKTRONER |
| 摘要 |
Disclosed is a method of manufacturing semiconductor devices including a step of irradiating the devices to alter the turnoff and forward drop characteristics thereof. The irradiation is carried out at a temperature above 100 DEG C, and preferably in the range of 150 DEG to 375 DEG C. No post irradiation annealing step is required. |
| 申请公布号 |
SE424484(B) |
申请公布日期 |
1982.07.19 |
| 申请号 |
SE19770005140 |
申请日期 |
1977.05.03 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
Y S E * SUN |
| 分类号 |
H01L29/74;H01L21/263;H01L21/322;H01L29/744;H01L29/747;H01L29/861;(IPC1-7):01L21/26 |
主分类号 |
H01L29/74 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
