| 摘要 |
PURPOSE:To enhance the reliabiltiy of an MIS type semiconductor device by selectively forming a phoshorus glass film on a egion including a region at least under a metallic gate electrode on the insulating film of the device, thereby preventing the corrosion of the metal. CONSTITUTION:After a PSG film 6 formed on the overall surfaces of insulating films 4, 5 of an MIS type semiconductor device, the PSG film at least except the part under an aluminum gate electrode 11 is removed to expose an SiO2 film. Then, a source electrode 7, a drain electrode 8 and a gate electrode 11 are fomred. Since a high density PSG film is not provided under the metallic wiring layer in this manner, the disconnection of a wire due to the corrosion of the metal caused by the invasion of water is not produced, thereby enhancing the reliability. |
