| 摘要 |
PURPOSE:To reduce unevenness of film thickness and characteristic of SiO2 films, etc., to be formed on wafers of semiconductor device by a method wherein the nozzle parts of circumferential nozzles are formed variably on the nozzle main bodies enabling to change the supplying direction of reaction gas to be supplied. CONSTITUTION:The center nozzle 6 to supply reaction gas, carrier gas is provided at the inside center of an upper cover 1 of a spherical surface type reaction chamber 2 manufactured with a stainless steel, and the circumferential nozzles 8 are provided on the side wall 7. A means to form the nozzle parts of the circumferential nozzles on the main bodies of the circumferential nozzles to be variable is provided. Namely, the nozzle part 10' of the circumferential nozzle 8' is equipped to the nozzle main body 11 swingably to enable to convert the supplying direction of reaction gas within the range theta', or the nozzle part 10' thereof is formed with a flexible member (thin stainless steel, for example), and it is easily deformed manually to enable to convert the supplying direction of reaction gas. |
