| 摘要 |
PURPOSE:To decrease the occupying area per one photoelectric conversion section, by arranging 2m pieces of photoelectric conversion sections consisting of 2n pieces per one charge storage section for every shift register. CONSTITUTION:Twelve sets of photoelectric conversion sections consisting of Q11-Q22 formed with an N type diffusion region are arranged to one row mutually separatingly on a P type semiconductor substrate 5, and a charge produced with photoelectric conversion is stored in the photoelectric conversion sections. To transfer the charges stored in the conversion sections Q11-Q22, each 6 sets of charge storage sections S11-S16 and S21-S26 respectively arranged so that 1 section corresponds to two photoelectric conversion sections mutually and separately, are provided at both sides of the photoelectric conversion sections. A pair of shift registers 1 and 2 consisting of the charge storage section are provided. Further, transfer gates G11-G16 and G21-G26 are mutually and separately arranged among the storage sections S11-S16 and S21-S26 alternately, and transfer gate voltage applying terminals 13 and 14 are provided. |
