发明名称 |
Temperature-compensated integrated semiconductor circuit |
摘要 |
A current-controlling or current-regulating metal oxide (MOS) transistor is connected in a circuit between a power supply line and a MOS circuit. A control signal whose level depends on the relevant temperature in a particular case is supplied to the gate terminal of the MOS control and regulation transistor to compensate for the current flow reduction due to the lower mobility of the minority charge carriers at high temperatures. The response time of the MOS circuit is rendered less temperature-dependent as a result of the current compensation.
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申请公布号 |
DE3141714(A1) |
申请公布日期 |
1982.07.15 |
申请号 |
DE19813141714 |
申请日期 |
1981.10.21 |
申请人 |
TOKYO SHIBAURA DENKI K.K. |
发明人 |
IWAHASHI,HIROSHI;ASANO,MASAMICHI |
分类号 |
H01L27/092;E05F15/632;E05F15/70;G05D23/20;H01L21/8238;H01L27/02;H01L29/78;H03K5/00;H03K5/13;H03K17/14;H03K17/687;H03K19/003;H03K19/017;H03K19/0944;H03K19/0948;(IPC1-7):01L23/56;01L29/78;01L27/04 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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