| 摘要 |
PURPOSE:To make possible the control of the potential of a photo diode according to the amount of light, and to contrive the improvement of an S/N ratio by controlling the potential by the DC voltage of a light-shielding electrode. CONSTITUTION:A transfer gate region 5 is constituted of a double gate of a part which is controlled by the extended one of an electrode 6 on a register part 3 and an adjacent part 10 near a photo diode 4 which is controlled by a light-shielding electrode 8. A control voltage to correspond to an image scene is given to the electrode 8. By making the region, which is controlled by the electrode 8, by positioned on the side near the photo diode 4 out of the transfer gate region 5, the set potential of the diode 4 is controlled and decided by the DC voltage of the electrode 8. Therefore, the control, which corresponds to the amount of light, of the set potential of the photo diode can be performed. |
