| 摘要 |
PURPOSE:To form a pattern having high aspect ratio due to X-ray negative resist film by etching an X-ray absorption substance layer, etching the surface of X-ray negative resist film, and then emitting X-rays to perform the development. CONSTITUTION:An X-ray negative resist film 12 is covered thickly such as 1-10mum or higher on a substrate 11. An X-ray absorption substance layer 13 is formed thinly such as 1,000-2,000Angstrom on the film 12. Further, a resist film 14 is covered thereon such as, 4,000Angstrom . Since the film 14 is thin, an ultrafine pattern can be obtained. Then, with the film 14 as a mask the layer 13 is etched. In this case, the surface 15 of the film 12 is slightly etched. The, X-ray is emitted to crosslink an X-ray negative resist film 16 of the part not coated with the mask of the layer 13 for its development. At this time, the developer is impregnated from the surface of the film 12 to the layer 13, thereby dissolving the part of the film 12. At this time unnecessary parts of the layer 13 and the film 14 are also simultaneously removed. |
