COMPLEMENTARY-METAL OXIDE SEMICONDUCTOR TYPE SEMICONDUCTOR DEVICE

摘要

PURPOSE:To improve the density of integration and frequency response property by using a two layer film of N type polycrystal Si and the silicide of a metal having the high melting point as a gate material and directly connecting an N type section of substrate single crystal Si to the polycrystal Si and a P type section to the silicide. CONSTITUTION:Wiring resistance is minimized by employing the two layer film of the N type polycrystal Si and the metal having the high melting point as the gate material. The N type section of the substrate single crystal Si can directly be connected to the polycrytal Si and the P type section to the silicide of the metal having the high melting point. Ions are inplanted through the silicide of the metal having the high melting point. A source and a drain are formed by selecting the energy of implantation so that a P type impurity is also doped to the substrate Si side at that time.