| 摘要 |
PURPOSE:To increase an endurance against a soft error by reducing a contact area between a region concerned directly with storing of information and a substrate in a memory cell of static RAM. CONSTITUTION:A gate electrode and wiring 9(Q1) for a transistor Q1 and a gate electrode and wiring 10(Q4) for a transistor Q4 are formed on a silicon dioxide insulation film on a silicon semiconductor substrate. A drain region for the transistor Q1 and a source region 14 (Q1, Q2) for a transistor Q2, and a source region 15(Q1) for the transistor Q1 are formed on a multicrystal silicon layer adjacent to the region 14(Q1, Q2) is a gate electrode 16(Q2) for the transistor Q2. In such a way, because the region adjacent directly to a store of the information a avoided to make contact with a semiconductor substrate 1, and endurance against the radiation of alpha ray, etc. can be increased. |
