MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To prevent a crack formed in a substrate by shaping a ground surface in the midway of a polysilicon layer grown on a groove for isolation and growing a polysilicon layer on the surface. CONSTITUTION:An N type layer 3 and a SiO2 film 6 are formed to the silicon substrate 1. The polysilicon layer 7 used as the isolation is grown through a CVD method. The layer 7 ground, and the ground surface 9 is shaped. The polysilicon layer 10 as the second layer is grown onto the surface 9. Accordingly, the crack is hardly formed in the substrate 1 because a boundary layer 8 is not generated like the layer 7 in the layer 10.