Non-volatile dynamic random access memory cell.

摘要

The non-volatile semiconductor memory includes a one device dynamic volatile memory cell having a storage capacitor (C5) with a plate (12) and a storage node (10) coupled to a non-volatile device having a floating gate (FG), a control gate (24) and a voltage divider (16) having first and second serially-connected capacitors (C1, C2), with the floating gate (FG) being disposed at the common point between the first and second capacitors. The plate (12) of the storage capacitor is connected to a reference voltage source. The control gate (24) is preferably capacitively coupled to the floating gate (FG) through the first (C1) capacitor which includes a dual charge or electron injector structure (26). The capacitance of the first capacitor (C1) has a value substantially less than that of the second capacitor (C2).