| 摘要 |
PURPOSE:To derive a substrate potential from a substrate surface by permitting a direct connection between the substrate and a wiring metallic material in a semiconductor integrated circuit with a two layer wiring structure comprising a metallic material like aluminium or the like and a multicrystal silicon. CONSTITUTION:A field oxide film 2 and a gate oxide film 3 are formed on a silicon substrate 1 and the gate oxide film 3 is selectively removed to form a first multicrystal silicon 4. Subsequently, a diffusion layer 5 for a source and drain use is formed by diffusing an impurity conductive oppositely to the substrate 1. Subsequently, an insulation film 6 is formed in the area except the surface of the multicrystal silicon 4 and the second multicrystal silicon 7 is covered over the surface of the multicrystal silicon 4. Subsequently, the first multicrystal silicon 4 and the second multicrystal silicon 7 adjacent to the former are removed, after an aluminium 10 is coated on the entire surface, the aluminium 10 is selectively removed. Subsequently, the second multicrystal silicon 7 is removed by using the aluminium 10 for a mask, and there is formed an area wherein a two layer structure wiring consisting of the multicrystal silicons 4, 7 and the aluminium 10 or the like can make contact with the substrate 1. |
