| 摘要 |
PURPOSE:To accurately form a micropattern with a small amount of developers in a short time by developing a positive type radiation resist film to an intermediate state with a developer with higher solubility in a short time and to the final state with a developer with lower solubility. CONSTITUTION:When a positive type resist which is dissolved and removed by the cutting of the principal chain when irradiated is developed, it is first developed with a developer higher solubility such as methyl acetate for about 30sec and then developed with a developer with lower solubility prepared by mixing ethyl acetate with methyl isobutyl ketone in 3:7wt. ratio for 3min. The resist includes ''MPR '' of MATSUSHITA DENKI K.K. using a mixed resist consisting of methyl methacrylate, methacrylic acid and tripropylene glycol diepoxide. By making use of only the developer with higher solubility, the resist can be developed in about 1min, yet the unexposed part is also dissolved to cause lower pattern accuracy. The development with only the developer with lower solubility requires 12min. By this developing method the pattern accuracy is maintained, and the developing time is shortened considerably. A micropattern is developed with high resolution, and the total amount of used developers is reduced. |
