发明名称 JIG ASSEMBLY FOR SURFACE TREATMENT
摘要 PURPOSE:To prevent the electrolyte from covering a substrate surface not to be treated by a method wherein a ring abuttingly surrounds the periphery of a wafer that is vacuum sucked with the surface to be treated facing downward to an electrode provided chuck and then is immersed in an electrolytic tank including the other electrode. CONSTITUTION:A chuck 4 with a ring shaped electrode 9 on its lower surface is provided at its central part with a port 8 to purge air and another port 12 to put the N2 gas in. The semiconductor wafer 5 is vacuum sucked with surface to be treated facing downward and abuts against the electrode 9. The lower circumference of the chuck 4 is provided with a ring shaped groove 15. A ring 20 is installed with its upper edge 21 fitting in the groove 15 and the lower edge 23 abutting at the wafer 5. The space constituted by the chuck 4 and the wafer 5 is then filled with the N2 gas. The lower surface of the wafer 5 as it stands is immersed in an electrolytic tank 7 containing the other electrode.
申请公布号 JPS57112030(A) 申请公布日期 1982.07.12
申请号 JP19800187311 申请日期 1980.12.29
申请人 FUJITSU KK 发明人 INOMATA SHIGEO;KAMATA YORIO
分类号 H01L21/677;H01L21/306;H01L21/67 主分类号 H01L21/677
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