| 摘要 |
PURPOSE:To prevent the generation of unevenness on the edge of the oxide film of the subject semiconductor device by a method wherein, after an oxide film has been formed on a semiconductor substrate, an impurity diffusing window has been provided and an impurity ion has been implanted in the substrate and when an annealing is performed by irradiating a laser beam, a liquid layer is interpositioned on the substrate. CONSTITUTION:An SiO2 film is coated on the Si substrate, the impurity diffusing window is provided, an impurity implantation region is formed by implanting an ion, and when an annealing is performed to activate the above region by irradiating a laser beam, the following procedures are taken. The substrate having the selectively exposed surface is soaked in glycerin, CCl4 and warer, a liquid layer of 2-3mum in thickness is formed on the substrate, and a ruby or YAG laser, having energy density of 1.5-1.6 joules/cm<2>, is irradiated through the liquid layer. Through these procedures, no unevenness is generated on the edge of the SiO2 film even when energy density is high. |
