| 摘要 |
PURPOSE:To facilitate isolation between elements of a bipolar IC by a method wherein a concave region is formed on a semiconductor substrate, and in addition to provision of opening at its bottom, a single crystal layer of magnesia spinel is grown on the side wall and at the bottom of the concave region, a semiconductor layer which is to be a collector is buried here, and base and emitter region are provided in this layer. CONSTITUTION:A concave region 11a is formed on an Si substrate 11, and along this bottom and the side wall and furthermore the rim of the substrate 11 a magnesia spinel layer 12 of the first layer is grown by vapor phase epitaxial growth, and by lamination over it an n<+> type layer 13 is grown. Next again a magnesia spinel layer of the second layer 14 is grown, a polycristalline Si layer 15 which has an opening 15a at its bottom is provided over it, an opening which measures the same size is also bored in the layer 14, and over it with the opening 15 buried, an n type layer 16 which is to be a collector region is grown. Subsequently the layer 16 is lapped to the position shown by the broken line A or B, and a p type base region 17 in the layer 16 and an n type emitter region 18 in it are individually formed by diffusion. |
