发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To facilitate the removal of a bridge produced at the gap of a multilayer wiring, by providing a projection between regions where a lower layer wiring crosses two upper layer wirings, and photo-etching the upper layer wiring which remains at the end of projection after the formation of upper layer wiring. CONSTITUTION:For instance, a lower layer wiring 4 is formed on a field film 2 of element-formed substrate 1 in a shape that provides a horizontal projection 11 between regions where the wiring 4 is due to cross two upper layer wiring 8. Next, the upper layer wiring 8 is formed via an interlayer film 5, and a resist film 9 is coated. An opening 12 is provided at the end of a bridge 6 formed along the projection 11. Next, the end of bridge 6' is removed after etching evenly with etching material for the upper layer wiring 8. The resist film 9 is removed and the multilayer wiring structure is made. This facilitates removal of the bridge 6' and prevents the upper layer wiring 8 from over-etching. This also improves the yield and reliability of multilayer wiring.
申请公布号 JPS57112052(A) 申请公布日期 1982.07.12
申请号 JP19800187222 申请日期 1980.12.29
申请人 FUJITSU KK 发明人 KANAZAWA MASAO
分类号 H01L21/3213;H01L21/306 主分类号 H01L21/3213
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