| 摘要 |
PURPOSE:To enhance the performance of a small-sized static storage cell, by attaining a simpler circuit constitution with a higher degree of integration than the conventional 6-transistor storage cell. CONSTITUTION:A side of a layer across a 4-layer structure is connected to the earth potential side 41 and the other side is connected to the power supply voltage VAA side 40 via load elements 33 and 34 to a semiconductor element 31 of 4-layer structure in which the semiconductor layers of opposite conduction types to each other are formed alternately. Either the source or drain of an MIS transistor TRQ11 functioning as a transmission gate is connected to an input terminal to the storage element 31 of a structure having a point of connection as an input control terminal to either one of the two layers held between the both-end layers. The other side of the source and drain is connected to a bit line 37, and the gate terminal is connected to a word line. Either one of the source and drain of the 2nd TRQ12 functioning as another transmission gate is connected to a point of connection of the load element of the element 31, and the other is connected to the line 37. |
