| 摘要 |
PURPOSE:To enable doping, which ensures high impurity concentration and is at a deep level, simply without generating a thermal defect by utilizing high- speed electron rays having high energy. CONSTITUTION:An impurity sheet 3 is stacked onto a semiconductor substrate 2, and fixed to a supporting mechanism in an Al tube 1. The high-speed electron rays 6 having high energy (such as 1-10MeV) accelerated by means of an electron accelerator 5 are irradiated onto the impurity sheet 3. Accordingly, elements by electrons repelled from the impurity sheet 3 intrude into the semiconductor substrate 2, and the impurity can be doped. The doping, which ensures high impurity concentration and is at the deep level, is enabled by conducting irradiation for a long time and irradiation with high energy. |
