| 摘要 |
PURPOSE:To inject the impurity approximately uniformly up to a deep range without damaging the electrical characteristics of a semiconductor substrate by irradiating electron beams together with ion beams of the impurity. CONSTITUTION:The electron beams 3 having high energy (such as 9-10MeV) are irradiated onto the surface of the semiconductor substrate (such as a III-V group compound) from an electron ray accelerator 2 while the ion beams 5 having low energy (such as 5-8KeV) are shot to the same position from an ion accelerator 4. Accordingly, a large number of point defects are formed in the semiconductor, but impurity (such as Al, GaP) ions are doped by the action of acceleration diffusion or irradiation excitation diffusion by these defects. When annealing the semiconductor substrate 1, the point defects are removed, and the distribution of the impurity approximately uniform down to the deep range is obtained. |
