| 摘要 |
PURPOSE:To obtain a correct micropattern by coating a material to be etched with a photosensitive bisazide resin film, patternwise exposing the film in an oxidizing gaseous atmosphere, exposing it in an inert gaseous atmosphere using a photomask having a reverse pattern, and developing the exposed film. CONSTITUTION:A material 11 to be etched such as a semiconductor silicon substrate is coated with a photosensitive bisazide resin film 12. The film 12 is exposed to ultraviolet rays Y1 in an oxidizing atmosphere contg. O2 or O3 using the 1st photomask 14, and the resin film 15 of the exposed part is nitrosated or nitrated. The film 12 is further irradiated with the 2nd ultraviolet rays Y2 through a mask 21 having a pattern reverse to that of the mask 14 in an inert gaseous atmosphere, and the irradiated part 12'' is cross-linked and cured. The film 12 is then developed with a xylene developer dissolving the oxidized resin region 15 and the uncured region (a) remaining under the region 15 sometimes. Thus, a correct resin film pattern 22 is obtd. |
