| 摘要 |
<p>Method of fabricating a solid state electrooptical device having a patterned transparent metal oxide electrode. According to the method of the invention, a layer (18) of conductive transparent metal oxide is deposited on the surface of the semiconductor substrate (12). Thereafter, the transparent conductive layer (18) is covered with a layer (20) of a transition metal (preferably chromium) that forms a good electrical contact with the transparent metal oxide and is etchable independently of the transparent metal oxide. Portions of the transition metal are then etched away (e.g. by photolithographic techniques) to define the desired electrode transition using an etchant that attacks the transition metal but does not substantially attack the transparent metal oxide layer. Portions of the exposed transparent metal oxide layer are then removed using an etchant that attacks the transparent metal oxide but does not substantially attack the transition metal. Subsequently, portions of the remaining transition metal are removed from imaging areas of the device, leaving transition metal in only the peripheral areas where electrical connections are to be made. In the preferred embodiment, a final metallization layer (28) (e.g. gold) is deposited over the structure, and the structure is baked to adhere the final metal to the remaining portions of the transition metal. Finally, portions of the final layer of metal are removed leaving the final metal layer in only those areas of the common conductor and the bonding pads defined by the transition metal.</p> |
